diff options
Diffstat (limited to 'drivers')
| -rw-r--r-- | drivers/mtd/nand/nand_base.c | 66 |
1 files changed, 39 insertions, 27 deletions
diff --git a/drivers/mtd/nand/nand_base.c b/drivers/mtd/nand/nand_base.c index 77b3400..16bb17f 100644 --- a/drivers/mtd/nand/nand_base.c +++ b/drivers/mtd/nand/nand_base.c @@ -2906,6 +2906,43 @@ static int nand_flash_detect_onfi(struct mtd_info *mtd, struct nand_chip *chip, } /* + * Set the bad block marker/indicator (BBM/BBI) patterns according to some + * heuristic patterns using various detected parameters (e.g., manufacturer, + * page size, cell-type information). + */ +static void nand_decode_bbm_options(struct mtd_info *mtd, + struct nand_chip *chip, u8 id_data[8]) +{ + int maf_id = id_data[0]; + + /* Set the bad block position */ + if (mtd->writesize > 512 || (chip->options & NAND_BUSWIDTH_16)) + chip->badblockpos = NAND_LARGE_BADBLOCK_POS; + else + chip->badblockpos = NAND_SMALL_BADBLOCK_POS; + + /* + * Bad block marker is stored in the last page of each block on Samsung + * and Hynix MLC devices; stored in first two pages of each block on + * Micron devices with 2KiB pages and on SLC Samsung, Hynix, Toshiba, + * AMD/Spansion, and Macronix. All others scan only the first page. + */ + if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) && + (maf_id == NAND_MFR_SAMSUNG || + maf_id == NAND_MFR_HYNIX)) + chip->bbt_options |= NAND_BBT_SCANLASTPAGE; + else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) && + (maf_id == NAND_MFR_SAMSUNG || + maf_id == NAND_MFR_HYNIX || + maf_id == NAND_MFR_TOSHIBA || + maf_id == NAND_MFR_AMD || + maf_id == NAND_MFR_MACRONIX)) || + (mtd->writesize == 2048 && + maf_id == NAND_MFR_MICRON)) + chip->bbt_options |= NAND_BBT_SCAN2NDPAGE; +} + +/* * Get the flash and manufacturer id and lookup if the type is supported. */ static struct nand_flash_dev *nand_get_flash_type(struct mtd_info *mtd, @@ -3087,6 +3124,8 @@ ident_done: return ERR_PTR(-EINVAL); } + nand_decode_bbm_options(mtd, chip, id_data); + /* Calculate the address shift from the page size */ chip->page_shift = ffs(mtd->writesize) - 1; /* Convert chipsize to number of pages per chip -1 */ @@ -3103,33 +3142,6 @@ ident_done: chip->badblockbits = 8; - /* Set the bad block position */ - if (mtd->writesize > 512 || (busw & NAND_BUSWIDTH_16)) - chip->badblockpos = NAND_LARGE_BADBLOCK_POS; - else - chip->badblockpos = NAND_SMALL_BADBLOCK_POS; - - /* - * Bad block marker is stored in the last page of each block - * on Samsung and Hynix MLC devices; stored in first two pages - * of each block on Micron devices with 2KiB pages and on - * SLC Samsung, Hynix, Toshiba, AMD/Spansion, and Macronix. - * All others scan only the first page. - */ - if ((chip->cellinfo & NAND_CI_CELLTYPE_MSK) && - (*maf_id == NAND_MFR_SAMSUNG || - *maf_id == NAND_MFR_HYNIX)) - chip->bbt_options |= NAND_BBT_SCANLASTPAGE; - else if ((!(chip->cellinfo & NAND_CI_CELLTYPE_MSK) && - (*maf_id == NAND_MFR_SAMSUNG || - *maf_id == NAND_MFR_HYNIX || - *maf_id == NAND_MFR_TOSHIBA || - *maf_id == NAND_MFR_AMD || - *maf_id == NAND_MFR_MACRONIX)) || - (mtd->writesize == 2048 && - *maf_id == NAND_MFR_MICRON)) - chip->bbt_options |= NAND_BBT_SCAN2NDPAGE; - /* Check for AND chips with 4 page planes */ if (chip->options & NAND_4PAGE_ARRAY) chip->erase_cmd = multi_erase_cmd; |