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-rw-r--r--common/cmd_doc.c30
-rw-r--r--include/linux/mtd/doc2000.h65
2 files changed, 91 insertions, 4 deletions
diff --git a/common/cmd_doc.c b/common/cmd_doc.c
index 37b7325..ab37516 100644
--- a/common/cmd_doc.c
+++ b/common/cmd_doc.c
@@ -22,11 +22,7 @@
#if (CONFIG_COMMANDS & CFG_CMD_DOC)
#include <linux/mtd/nftl.h>
-#include <linux/mtd/nand_legacy.h>
-#include <linux/mtd/nand_ids.h>
-
#include <linux/mtd/doc2000.h>
-#include <linux/mtd/nftl.h>
#ifdef CFG_DOC_SUPPORT_2000
#define DoC_is_2000(doc) (doc->ChipID == DOC_ChipID_Doc2k)
@@ -69,6 +65,32 @@ static struct DiskOnChip doc_dev_desc[CFG_MAX_DOC_DEVICE];
/* Current DOC Device */
static int curr_device = -1;
+/* Supported NAND flash devices */
+static struct nand_flash_dev nand_flash_ids[] = {
+ {"Toshiba TC5816BDC", NAND_MFR_TOSHIBA, 0x64, 21, 1, 2, 0x1000, 0},
+ {"Toshiba TC5832DC", NAND_MFR_TOSHIBA, 0x6b, 22, 0, 2, 0x2000, 0},
+ {"Toshiba TH58V128DC", NAND_MFR_TOSHIBA, 0x73, 24, 0, 2, 0x4000, 0},
+ {"Toshiba TC58256FT/DC", NAND_MFR_TOSHIBA, 0x75, 25, 0, 2, 0x4000, 0},
+ {"Toshiba TH58512FT", NAND_MFR_TOSHIBA, 0x76, 26, 0, 3, 0x4000, 0},
+ {"Toshiba TC58V32DC", NAND_MFR_TOSHIBA, 0xe5, 22, 0, 2, 0x2000, 0},
+ {"Toshiba TC58V64AFT/DC", NAND_MFR_TOSHIBA, 0xe6, 23, 0, 2, 0x2000, 0},
+ {"Toshiba TC58V16BDC", NAND_MFR_TOSHIBA, 0xea, 21, 1, 2, 0x1000, 0},
+ {"Toshiba TH58100FT", NAND_MFR_TOSHIBA, 0x79, 27, 0, 3, 0x4000, 0},
+ {"Samsung KM29N16000", NAND_MFR_SAMSUNG, 0x64, 21, 1, 2, 0x1000, 0},
+ {"Samsung unknown 4Mb", NAND_MFR_SAMSUNG, 0x6b, 22, 0, 2, 0x2000, 0},
+ {"Samsung KM29U128T", NAND_MFR_SAMSUNG, 0x73, 24, 0, 2, 0x4000, 0},
+ {"Samsung KM29U256T", NAND_MFR_SAMSUNG, 0x75, 25, 0, 2, 0x4000, 0},
+ {"Samsung unknown 64Mb", NAND_MFR_SAMSUNG, 0x76, 26, 0, 3, 0x4000, 0},
+ {"Samsung KM29W32000", NAND_MFR_SAMSUNG, 0xe3, 22, 0, 2, 0x2000, 0},
+ {"Samsung unknown 4Mb", NAND_MFR_SAMSUNG, 0xe5, 22, 0, 2, 0x2000, 0},
+ {"Samsung KM29U64000", NAND_MFR_SAMSUNG, 0xe6, 23, 0, 2, 0x2000, 0},
+ {"Samsung KM29W16000", NAND_MFR_SAMSUNG, 0xea, 21, 1, 2, 0x1000, 0},
+ {"Samsung K9F5616Q0C", NAND_MFR_SAMSUNG, 0x45, 25, 0, 2, 0x4000, 1},
+ {"Samsung K9K1216Q0C", NAND_MFR_SAMSUNG, 0x46, 26, 0, 3, 0x4000, 1},
+ {"Samsung K9F1G08U0M", NAND_MFR_SAMSUNG, 0xf1, 27, 0, 2, 0, 0},
+ {NULL,}
+};
+
/* ------------------------------------------------------------------------- */
int do_doc (cmd_tbl_t *cmdtp, int flag, int argc, char *argv[])
diff --git a/include/linux/mtd/doc2000.h b/include/linux/mtd/doc2000.h
index ebf9a76..eeb1d7e 100644
--- a/include/linux/mtd/doc2000.h
+++ b/include/linux/mtd/doc2000.h
@@ -91,6 +91,13 @@ struct DiskOnChip;
#define ADDR_PAGE 2
#define ADDR_COLUMN_PAGE 3
+struct Nand {
+ char floor, chip;
+ unsigned long curadr;
+ unsigned char curmode;
+ /* Also some erase/write/pipeline info when we get that far */
+};
+
struct DiskOnChip {
unsigned long physadr;
unsigned long virtadr;
@@ -148,4 +155,62 @@ void doc_probe(unsigned long physadr);
void doc_print(struct DiskOnChip*);
+/*
+ * Standard NAND flash commands
+ */
+#define NAND_CMD_READ0 0
+#define NAND_CMD_READ1 1
+#define NAND_CMD_PAGEPROG 0x10
+#define NAND_CMD_READOOB 0x50
+#define NAND_CMD_ERASE1 0x60
+#define NAND_CMD_STATUS 0x70
+#define NAND_CMD_SEQIN 0x80
+#define NAND_CMD_READID 0x90
+#define NAND_CMD_ERASE2 0xd0
+#define NAND_CMD_RESET 0xff
+
+/*
+ * NAND Flash Manufacturer ID Codes
+ */
+#define NAND_MFR_TOSHIBA 0x98
+#define NAND_MFR_SAMSUNG 0xec
+
+/*
+ * NAND Flash Device ID Structure
+ *
+ * Structure overview:
+ *
+ * name - Complete name of device
+ *
+ * manufacture_id - manufacturer ID code of device.
+ *
+ * model_id - model ID code of device.
+ *
+ * chipshift - total number of address bits for the device which
+ * is used to calculate address offsets and the total
+ * number of bytes the device is capable of.
+ *
+ * page256 - denotes if flash device has 256 byte pages or not.
+ *
+ * pageadrlen - number of bytes minus one needed to hold the
+ * complete address into the flash array. Keep in
+ * mind that when a read or write is done to a
+ * specific address, the address is input serially
+ * 8 bits at a time. This structure member is used
+ * by the read/write routines as a loop index for
+ * shifting the address out 8 bits at a time.
+ *
+ * erasesize - size of an erase block in the flash device.
+ */
+struct nand_flash_dev {
+ char * name;
+ int manufacture_id;
+ int model_id;
+ int chipshift;
+ char page256;
+ char pageadrlen;
+ unsigned long erasesize;
+ int bus16;
+};
+
#endif /* __MTD_DOC2000_H__ */